An implanted-emitter 4H-SiC bipolar transistor with high current gain

An epi-base, implanted-emitter, npn bipolar transistor which showed a maxim um common emitter current gain (beta) of similar to 40, the highest current gain reported for BJT in any polytype of SiC has been experimentally demon strated in 4H-SiC, The forward drop was similar to1 V at forward current de nsity of 50 A/cm(2). The current gain decreases hence specific on-resistanc e increases with increasing temperature. The negative temperature coefficie nt of beta makes the device attractive for paralleling and for preventing t hermal runaways.