3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC

A 2-mm x 2-mm, 4H-SiC, asymmetrical npnp gate turn-off (GTO) thyristor with a blocking voltage of 3100 V and a forward current of 12 A is reported. Th is is the highest reported power handling capability of 37 kW for a single device in SiC, The 5-epilayer structure utilized a blocking layer that was 50 mum thick, p-type, doped at about 7-9 x 10(14) cm(-3). The devices were terminated with a single zone junction termination extension (JTE) region f ormed by ion-implantation of nitrogen at 650 degreesC, The device was able to reliably turn-on and turn-off 20 A (500 A/cm(2)) of anode current with a turn-on gain (I-K/I-G, (on)) of 20 and a turn-off gain (I-K/I-G, (off)) of 3.3.