Electrical characteristics of 4.5 kV implanted anode 4H-SiC P-I-N junctionrectifiers

4500 V 4H-SiC p-i-n junction rectifiers with low on-state voltage drop (3.3 -4.2 V), tow reverse leakage current (3 x 10(-6) A/cm(2)), and fast switchi ng (30-70 us) have been fabricated and characterized. Forward current-volta ge measurements indicate a minimum ideality factor of 1.2 which confirms a recombination process involving multiple energy levels. Reverse leakage cur rent exhibits a square root dependence on voltage below the punchthrough vo ltage where leakage currents of less than 3 x 10(-6) A/cm(2) are measured. Reverse recovery measurements are presented which indicate the presence of recombination at the junction perimeter where a surface recombination veloc ity of 2-8 x 10(5) cm/s is found, These measurements also indicate drift la yer bulk carrier lifetimes ranging from 74 ns at room temperature to 580 ns at 250 degreesC.