RF power LDMOSFET on SOI

We have fabricated a SOI laterally diffused MOSFET that is designed for use in radio frequency power amplifiers for wireless system-on-a-chip applicat ions. The device is fabricated on a thin-him SOI wafer using a process that is suitable for integration with SOI CMOS, An under-source body contact is implemented and both a high breakdown voltage and a high f(t) are attained . The device performance compares favorably with bulk silicon rf power MOSF ETs. For a gate length of 0.7 mum the device f(t) is 14 GHz, f(max) is 18 G Hz, and the breakdown voltage approaches 25 V.