Theoretical analysis of lateral modes in broad-area semiconductor lasers with profiled reflectivity output facets

Citation
M. Szymanski et al., Theoretical analysis of lateral modes in broad-area semiconductor lasers with profiled reflectivity output facets, IEEE J Q EL, 37(3), 2001, pp. 430-438
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
37
Issue
3
Year of publication
2001
Pages
430 - 438
Database
ISI
SICI code
0018-9197(200103)37:3<430:TAOLMI>2.0.ZU;2-6
Abstract
This paper provides a theoretical analysis of the near-threshold behavior o f broad-area lasers with profiled reflectivity output facets. Threshold cur rents and far-held patterns of the lateral modes are calculated according t o two models. The first model assumes that the modes are determined by the effective lateral waveguide, while the second one is based on the modes of an open resonator. Single- and three-stripe mirror configurations have been considered. The main goal of the analysis is to identify the lateral guidi ng mechanism in such lasers and to assess the influence of the mirror confi guration on thresholds for single- and multimode operation and on beam char acteristics.