Strained-layer InGaAs quantum-well heterostructure lasers

The incorporation of intentional strain in heterostructure lasers was almos t unheard of a decade ago or so and considered a problem to be avoided. Adv ances in both epitaxial crystal growth technology and the understanding of the physics and reliability of these materials have led to a remarkable inc rease in the commercial use of strained-layer lasers. The industry has bene fited from an increase in the available range of emission wavelengths from quantum-well diode lasers and dramatic improvement in their time-zero perfo rmance. In this paper, we review the characteristics of strained-layer InGa As quantum-well heterostructure lasers that have resulted in the emergence of this important technology.