Comparison of GaN p-i-n and Schottky rectifier performance

Authors
Zhang, APP Dang, GT Ren, F Cho, H Lee, KP Pearton, SJ Chyi, JI Nee, TE Lee, CM Chuo, CC
Citation
App. Zhang et al., Comparison of GaN p-i-n and Schottky rectifier performance, IEEE DEVICE, 48(3), 2001, pp. 407-411
Citations number
17
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
3
Year of publication
2001
Pages
407 - 411
Database
ISI
SICI code
0018-9383(200103)48:3<407:COGPAS>2.0.ZU;2-#
Abstract
The performance of GaN p-i-n and Schottky rectifiers fabricated on the same wafer was investigated as a function of device size and operating temperat ure. There was a significant difference in reverse breakdown voltage (490 V for p-i-n diodes; 347 V for the Schottky diodes) and forward turn-on volta ge (similar to5 V for the p-i-n diodes; similar to3.5 V for the Schottky di odes). Both types of device showed a negative temperature coefficient for r everse breakdown, with value -0.34 +/- 0.05 V . K-1.