The state-of-the-art of GaAs and InP power devices and amplifiers

Authors
Nguyen, C Micovic, M
Citation
C. Nguyen et M. Micovic, The state-of-the-art of GaAs and InP power devices and amplifiers, IEEE DEVICE, 48(3), 2001, pp. 472-478
Citations number
75
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
3
Year of publication
2001
Pages
472 - 478
Database
ISI
SICI code
0018-9383(200103)48:3<472:TSOGAI>2.0.ZU;2-3
Abstract
Significant investments and R&D efforts over the past two decades have esta blished GaAs and InP electronic device technologies from substrate manufact uring to MMIC amplifier design and testing. Today, GaAs and InP HBTs and HF ETs, as far as gain, efficiency, and power are concerned, dominate the whol e spectrum from S- to W-band and beyond, In this paper we will discuss rece nt advances in device technologies and survey the state of the art performa nce of GaAs and InP HFETs and HBTs.