High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes

The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investiga ted via simulations using MEDICI. It is shown that the introduction of quan tum features? such as InGaN quantum wells and delta-doped regions of p-Al0. 33Ga0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over t hree orders of magnitude.