Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

The selective area growth (SAG) and properties of AlGaN/GaN heterojunction bipolar transistors (HBTs) grown by low-pressure metalorganic chemical vapo r deposition (MOCVD) are described and analyzed. Transistors based on group m-nitride material are attractive for high-power and high-temperature appl ications, Much work has been focused on improving p-type material, as well as heterojunction interfaces. However, there have been very few reports on HBTs operating at room temperature. At this time, current gains for nitride -based HBTs have been limited to similar to 10. Selective area regrowth was applied to the growth of AlGaN/GaN HBTs to analyze its potential advantage s as compared to more traditional growth techniques in order to realize imp roved electrical performance of the devices.