An X-band GaNHEMT power amplifier design using an artificial neural network modeling technique

In this paper, the first gallium nitride (GaN) based high electron mobility transistor (HEMT) power amplifier design using an artificial neural networ k (ANN) modeling technique is presented. The ANN technique was used to mode l the small signal behavior of a device with a gate periphery of 1 mm and a gate length of 1 mum over the broad frequency range from 1 GHz to 26 GHz w ith multiple bias points, based on fitting calculated S-parameters to measu red S-parameters. A single stage amplifier constructed using these paramete rs showed a gain of about 7 dB and an output power of 1.2 W at 8 GHz when b iased at V-ds = 20 V and I-ds = 220 mA in class AB mode. The good agreement between measured and simulated results was shown in both S-parameter model ing and in amplifier design.