Generation-recombination noise in GaN/A1GaN heterostructure field effect transistors

Authors
Rumyantsev, SL Pala, N Shur, MS Borovitskaya, E Dmitriev, AP Levinshtein, ME Gaska, R Khan, MA Yang, JW Hu, XH Simin, G
Citation
Sl. Rumyantsev et al., Generation-recombination noise in GaN/A1GaN heterostructure field effect transistors, IEEE DEVICE, 48(3), 2001, pp. 530-534
Citations number
26
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
3
Year of publication
2001
Pages
530 - 534
Database
ISI
SICI code
0018-9383(200103)48:3<530:GNIGHF>2.0.ZU;2-F
Abstract
Local levels with a large activation energy E-alpha similar to 0.8-1.0 eV h ave been observed in low-frequency noise measurements of GaN/AlGaN heterost ructure field effect transistors (HFETs and MOS-HFETs) grown on 4H-SiC subs trates. The noise might come from thin (30 nm) AlGaN barrier layer The esti mates of the level parameters based on this assumption resulted in reasonab le values of capture cross section sigma (n) approximate to (10(-12) - 10(- 13)) cm(2) and trap concentration N-t approximate to 5 x 10(16) cm(-3).