Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries

We present a comprehensive study of the transport dynamics of electrons in the ternary compounds, AlxGa1-xN and InxGa1-xN. Calculations are made using a nonparabolic effective mass energy band model, Monte Carlo simulation th at includes all of the major scattering mechanisms, The band parameters use d in the simulation are extracted from optimized pseudopotential band calcu lations to ensure excellent agreement with experimental information and ab initio band models. The effects of alloy scattering on the electron transpo rt physics are examined. The steady-state velocity field curves and low hel d mobilities are calculated for representative compositions of these alloys at different temperatures and ionized impurity concentrations. A field dep endent mobility model is provided for both ternary compounds AlGaN and InGa N. The parameters for the low and high held mobility models for these terna ry compounds are extracted and presented. The mobility models can be employ ed in simulations of devices that incorporate the ternary III-nitrides.