Temperature dependent transport properties in GaN, A1(x)Ga(1-x)N, and InxGa1-xN semiconductors

Ensemble Monte Carlo simulation is used to determine the electron saturatio n velocity and low-field mobility for AlxGa1-xN and InxGa1-xN. Acoustic pho non, optical phonon, intervalley, ionized impurity, alloy, and piezoelectri c scattering are included in the simulation. Doping concentration ranging f rom 10(17) cm(-3) to 10(19) cm(-3) is considered in the temperature range o f 50 K to 500 K, Theoretical calculation shows excellent agreement with low -field mobility experimental data. Empirical expressions for low field mobi lity and saturation velocity are provided as functions of temperature, dopi ng concentration and mole fraction.