AlGaN/GaN HEMTs on SiC with over 100 GHz f(T) and low microwave noise

High performance AlGaN/GaN high electron mobility transistors (HEMTs) with 0.12 mum gate-length have been fabricated on an insulating SiC substrate. T he devices exhibited an extrinsic transconductance of 217 mS/mm and current drive capability as high as 1.19 A/mm. The threshold voltage of the device s was -5.5 V. For AlGaN/GaN HEMTs with the same gate-length, a record high unity current gain cut-off frequency (f(T)) of 101 GHz and a maximum oscill ation frequency (f(MAX)) of 155 GHz were measured at V-ds = 16.5 V and T-gs = 5.0 V. The microwave noise performances of the devices were characterize d from 2 to 18 GHz at different drain biases and drain currents, At a drain bias of 10 V and a gate bias of -4.8 V, the devices exhibited a minimum no ise figure (NFmin) of 0.53 dB and an associated gain (G(a)) of 12.1 dB at 8 GHz, Also, at a fixed drain bias of 10 V with the drain current swept, the lowest NFmin of 0.72 dB at 12 GHz was obtained at I-ds = 100 mA/mm and a p eak G(a) of 10.59 dB at 12 GHz was obtained at I-ds = 150 mA/mm. With the d rain current held at 114 mA/mm and drain bias swept, the lowest NFmin of 0. 42 dB and 0.77 dB were obtained at V-ds = 8 V at 8 GHz and 12 GHz, respecti vely, To our knowledge, these are the best microwave noise performances of any GaN-based FETs ever reported.