Very-high power density AlGaN/GaN HEMTs

Research work focusing on the enhancement of large-signal current-voltage ( I-V) capabilities has resulted in significant performance improvement for A lGaN/GaN HEMT's. 100-150 mum wide devices grown on SIC substrates demonstra ted a record power density of 9.8 W/mm at 8 GHz, which is about ten times h igher than GaAs-based FETs; similar devices grown on sapphire substrates sh owed 6.5 W/mm, which was thermally limited, 2-mm-wide devices flip-chip mou nted on to AlN substrates produced 9.2-9.8 W output power at 8 GHz with 44- 47% PAE, A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 G Hz, representing the highest CW power obtained from GaN-based integrated ci rcuits to date.