Polysilicon quantization effects on the electrical properties of MOS transistors (vol 47, pg 2266, 2000.)

Authors
Spinelli, AS Pacelli, A Lacaita, AL
Citation
As. Spinelli et al., Polysilicon quantization effects on the electrical properties of MOS transistors (vol 47, pg 2266, 2000.), IEEE DEVICE, 48(3), 2001, pp. 609-609
Citations number
1
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
3
Year of publication
2001
Pages
609 - 609
Database
ISI
SICI code
0018-9383(200103)48:3<609:PQEOTE>2.0.ZU;2-4