Low temperature metal-organic chemical vapor deposition of Ru thin films as electrode for high dielectric capacitors

Authors
Park, KW Han, YK Oh, K Yang, DY Hwang, CJ Park, J Hwang, CS
Citation
Kw. Park et al., Low temperature metal-organic chemical vapor deposition of Ru thin films as electrode for high dielectric capacitors, INTEGR FERR, 30(1-4), 2000, pp. 45-52
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
30
Issue
1-4
Year of publication
2000
Pages
45 - 52
Database
ISI
SICI code
1058-4587(2000)30:1-4<45:LTMCVD>2.0.ZU;2-9
Abstract
Low temperature metal-organic chemical vapor deposition (MOCVD) process of Ru films for use as electrode material was studied using a noble dome type reactor, liquid delivery technique and a new precursor. The films were grow n at temperatures ranging from 275 degreesC to 480 degreesC in which film g rowth was controlled by a surface chemical reaction with a small activation energy of 0.21 eV. The root-mean-squared surface roughness was as low as 2 3 Angstrom for a Film grown at 290 degreesC on a SiO2 surface.