Incorporation of Pb, Ti, and Zr into MOCVD grown PbZrxTi1-xO3 thin films

Authors
Rossinger, SA Moret, MP Misat, SI Hageman, PR Van der Linden, HA Haverkamp, E Corbeek, WHM Larsen, PK
Citation
Sa. Rossinger et al., Incorporation of Pb, Ti, and Zr into MOCVD grown PbZrxTi1-xO3 thin films, INTEGR FERR, 30(1-4), 2000, pp. 71-79
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
30
Issue
1-4
Year of publication
2000
Pages
71 - 79
Database
ISI
SICI code
1058-4587(2000)30:1-4<71:IOPTAZ>2.0.ZU;2-Y
Abstract
Metal Organic Chemical Vapour Deposition was used to grow PbTiO3 and PbZrxT i1-xO3 thin films on Pt/Ti/SiO2/Si substrates. Incorporation of Ph and Ti i nto PbTiO3 was studied as a function of the growth temperature, gas phase c omposition, and reactor pressure, keeping the other deposition parameters c onstant. The stoichiometric homogeneity in lateral and in vertical directio n was measured on optimised PbTiO3 and PbZrxTi1-xO3 layers using Inductive Coupled Plasma - Atomic Emission Spectroscopy.