Chemical solution technique to prepare perovskite PZT and PLZT thin films and powders

Citation
N. Pellegri et al., Chemical solution technique to prepare perovskite PZT and PLZT thin films and powders, INTEGR FERR, 30(1-4), 2000, pp. 111-119
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
30
Issue
1-4
Year of publication
2000
Pages
111 - 119
Database
ISI
SICI code
1058-4587(2000)30:1-4<111:CSTTPP>2.0.ZU;2-R
Abstract
PbZr0.65Ti0.35O3 and Pb0.91La0.09Zr0.65Ti0.35O3 thin films with thickness o f around 100 nm were prepared by the chemical solution deposition technique on Si (100) substrate. Complex metal alkoxide precursors were synthesized by alcoholisis and alcohol exchange reactions starting from metallorganics compounds. NMR spectroscopic techniques, H-1 and C-13, and FTIR analysis we re used to study the arrangement of the metals and oxygen in the precursor molecules. The films were deposited on Si (100) by spin coating technique a nd thermal treated by Rapid Thermal Processing for film crystallization. Th e thermal evolution and structural characterization were performed by DTA-T G/FTIR and by glazing incidence XRD and XRD powder. A PLZT powder with a we ll-crystallized perovskite structure was obtained at 700 degreesC free of p yrochlore phase whereas the PLZT film exhibits a distorted perovskite struc ture and residual pyrochlore. The PZT films were less crystallized. The sil icon substrate affects the crystal structure of the film. The residual acet ylacetonate groups in the precursor of PLZT, would reduce the clustering of Zirconium species.