Improvement on ferroelectric properties of metal-organic decomposited PZT thin film prepared by using prenucleation layer

Perovskite SrRuO3 (SRO) layer was, for the first time, been successfully sy nthesized by using metal-organic decomposition (MOD) process. The presence of SRO buffer layer on Pt(Si) substrates has significantly enhanced the cry stallization and densification behavior of the subsequently deposited Pb(Zr 0.52Ti0.48)O-3 films. The pyrochlore free perovskite phase can be obtained by post annealing the PZT/SRO/Pt(Si) films at 500 degreesC, which is 50 deg reesC lower than that needed in PZT/Pt(Si) films The fine grain (similar to 0.3 mum) microstructure can be attained by post-annealing at 650 degreesC f or PZT/SRO/Pt(Si) films and 700 degreesC for PZT/Pt(Si) films. The ferroele ctric hysteresis properties of the two PZT films are comparable to each oth er The leakage current properties of PZT/SRO/Pt(Si) films increased pronoun cedly with post-annealing temperature, resulting in inferriar leakage behav ior to PZT/Pt(Si) films.