Ferroelectric films of lead germanate prepared by modified chemical deposition techniques

Citation
Yy. Tomashpolsky et al., Ferroelectric films of lead germanate prepared by modified chemical deposition techniques, INTEGR FERR, 29(3-4), 2000, pp. 165-178
Citations number
41
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
INTEGRATED FERROELECTRICS
ISSN journal
10584587 → ACNP
Volume
29
Issue
3-4
Year of publication
2000
Pages
165 - 178
Database
ISI
SICI code
1058-4587(2000)29:3-4<165:FFOLGP>2.0.ZU;2-0
Abstract
The high adhesive. single crystal lead germanate films of 5-105 mum in thic k were fabricated on platinum substrates by in situ sol-gel technique. The stoichiometry of the films was closed to 5:3:11 without any oxygen deficien cy. The microstructure of better films consisted of closed packed hexagonal crystals of 200-300 mum in size. Ferroelectric transition was sharp with C urie point 170-180 degreesC. E-20=30-40, tg delta (20)=0.01, epsilon (max)= 200. P-s=3.2 muC/cm(2), E-c=16 kV/cm, rho =10(8)-10(9) Omega .cm. All these parameters (with the exception of epsilon (max)) were in a good agreement with bulk single crystals ones.