Quantum well and laser containing InAs quantum dots

Multiple quantum wells (MQW) and laser-containing InAs quantum dots were gr own on GaAs using molecular-beam epitaxy. For the MQW, the wells consisted of monolayers of InAs covered by In0.15Ga0.5As, with the barrier layers bei ng GaAs. The photoluminescence measurements were correlated with the strain in the wells. A continuing strain was observed for the wells containing th in InAs layer, where the photoluminescence wavelength was close to that of In,In0.15Ga0.85As. For the wells with a thicker InAs layer, with a photolum inescence wavelength of 1.28 mum, a discontinuing strain was observed. Dopi ng of the well constituents with Si, individually or collectively, led to a reduced photoluminescence intensity, but an enhanced intensity was observe d with the Be doping. Doping the InGaAs layer alone showed the least reduct ion in intensity using Si and most enhancement using Be. Continuous-wave la sing at room temperature was observed for the laser containing similar quan tum wells. (C) 2001 Published by Elsevier Science B.V.