The high temperature oxidation behavior of reaction-bonded silicon carbide

Authors
Huang, QW Jin, ZH
Citation
Qw. Huang et Zh. Jin, The high temperature oxidation behavior of reaction-bonded silicon carbide, J MATER PR, 110(2), 2001, pp. 142-145
Citations number
9
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY
ISSN journal
09240136 → ACNP
Volume
110
Issue
2
Year of publication
2001
Pages
142 - 145
Database
ISI
SICI code
0924-0136(20010319)110:2<142:THTOBO>2.0.ZU;2-D
Abstract
The high-temperature oxidation behavior of reaction-bonded silicon carbide containing 11.5 wt% free silicon is investigated in air at 1300 C. The expe rimental results show that the oxidation curve of the material obeys a loga rithmic equation due to the crystallization of amorphous silica and crackin g of the oxide scale. The room temperature flexural strength of the specime ns after oxidizing tends to increase first and then decrease with oxidation time. (C) 2001 Elsevier Science B.V. All rights reserved.