Metal-semiconductor transitions under uniaxial stress for single- and double-walled carbon nanotubes

Authors
Charlier, A McRae, E Heyd, R Charlier, MF
Citation
A. Charlier et al., Metal-semiconductor transitions under uniaxial stress for single- and double-walled carbon nanotubes, J PHYS CH S, 62(3), 2001, pp. 439-444
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
00223697 → ACNP
Volume
62
Issue
3
Year of publication
2001
Pages
439 - 444
Database
ISI
SICI code
0022-3697(200103)62:3<439:MTUUSF>2.0.ZU;2-H
Abstract
The alignment defects observed in cylindrical carbon nanotubes are related to the band gaps in a 1-D tight binding scheme. The influence of uniaxial s tress on the electronic properties is analyzed and evidence is put forward of possible experimentally observable semiconductor to metal transitions un der compression for single- and double-walled nanotubes. (C) 2001 Elsevier Science Ltd. All rights reserved.