Study of the fractional-dimensional theory of impurity levels

Authors
Voon, LCLY Rinaldo, M
Citation
Lcly. Voon et M. Rinaldo, Study of the fractional-dimensional theory of impurity levels, J PHYS CH S, 62(3), 2001, pp. 627-633
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN journal
00223697 → ACNP
Volume
62
Issue
3
Year of publication
2001
Pages
627 - 633
Database
ISI
SICI code
0022-3697(200103)62:3<627:SOTFTO>2.0.ZU;2-A
Abstract
A theory of impurity levels in semiconductor heterostructures based upon th e fraction-dimensional space is reevaluated here for bulk solids. The param etrization of impurities in bulk solids is necessary as a preliminary step in developing a theory for heterostructures. It is found that the bulk theo ry agrees closely with the conventional classification of impurities as dee p/shallow and anisotropic/isotropic for donors in direct-gap hosts. (C) 200 1 Elsevier Science Ltd. All rights reserved.