XAFS studies of the formation of cobalt silicide on (root 3 x root 3) SiC(0001)

Thin Co films (1-8 nm) were directly, sequentially, and codeposited with Si (3.6-29.2 nm) on the (root 3x root3)-R30 degrees reconstruction of 6H- SiC (0001). The films were annealed over a temperature range of 823-1373K and i nvestigated with XAFS, XPS, AES and AFM. After annealing up to 1373K direct ly deposited Co films do not transform entirely to cobalt disilicide and C segregation is observed on the surface of the films. On the other hand, seq uentially and co-deposited films do form cobalt disilicide after annealing at 823K, but also show islanding after annealing at 923K.