Study by X-ray absorption spectroscopy of Si3N4 films after Cu or Fe implantation and thermal treatment

Si3N4 amorphous thin layers prepared by sputtering have been implanted eith er with Cu or with Fe ions. X-ray absorption spectroscopy was performed at the Si K edge to characterise the electronic empty states of p character, t he structural state of the initial layers and the modifications around Si i nduced by implantation and a post-annealing treatment. We show that the ene rgy deposition process mainly leads to a reorganisation of the second coord ination shell around Si, i.e. concerns the Si-Si bonds.