Glancing-angle diffraction anomalous fine structure of InAs quantum dots and quantum wires

We have performed Diffraction Anomalous Fine Structure measurements at the As K-edge of self-growth InAs/InP(001) Quantum Wires and InAs/GaAs(001) Qua ntum Dots. The samples have been grown by Molecular Beam Epitaxy and their equivalent thickness is of 2.5 monolayers. We have measured the (440) and ( 420) Bragg reflections in glancing-angle scattering geometry, at incidence angles close to the substrate critical angle. We demonstrate the feasibilit y of the experiment reporting, for the first time, Diffraction Anomalous Fi ne Structure spectra of such low coverage epitaxial layers, and we show tha t the analysis of the Diffraction Anomalous Fine Structure lineshape togeth er with the analysis of oscillatory part of the signal, can provide informa tion about composition and strain of the nanostructures.