Silicon carbide films by laser pyrolysis of polycarbosilane

Citation
P. Colombo et al., Silicon carbide films by laser pyrolysis of polycarbosilane, J AM CERAM, 84(1), 2001, pp. 224-226
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
ISSN journal
00027820 → ACNP
Volume
84
Issue
1
Year of publication
2001
Pages
224 - 226
Database
ISI
SICI code
0002-7820(200101)84:1<224:SCFBLP>2.0.ZU;2-Q
Abstract
Thin films of polycarbosilane were deposited on Si and SiO2 substrates. Ins tead of conventional oven annealing (high temperatures, inert atmosphere), laser pyrolysis was used to achieve the polymer-to-ceramic conversion. In s ome conditions, especially when laser radiation absorption was enhanced by depositing a carbon layer on the surface of as-deposited films or by embedd ing graphite particles, this processing method yielded SLC ceramic coatings , without damaging the substrate. Processing in air or low vacuum did not r esult in oxidized coatings, contrary to what happens for oven pyrolysis, La ser-converted films were similar to oven-heated films processed at 1000 deg rees to 1200 degreesC.