Fabrication of carbon/silicon carbide composites by isothermal chemical vapor infiltration, using the in situ whisker-growing and matrix-filling process

C/SiC composites,were prepared via isothermal chemical vapor infiltration ( ICVI), A novel process of ill situ whisker growing and matrix filling durin g ICVI was devised to reduce the porosity of the C/SiC composites, by alter nating the dilute-gas species. C/SiC composites with increased density were prepared successfully using this novel process, in comparison with those o btained from the conventional ICVI process. The whiskers seem to have grown into the large pores and modified the pore structure that is filled by the SIC matrix.