Highly doped silicon electrodes for the electrochemical modification of self-assembled siloxane-anchored monolayers: A feasibility study

Citation
H. Grisaru et al., Highly doped silicon electrodes for the electrochemical modification of self-assembled siloxane-anchored monolayers: A feasibility study, LANGMUIR, 17(5), 2001, pp. 1608-1619
Citations number
28
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
LANGMUIR
ISSN journal
07437463 → ACNP
Volume
17
Issue
5
Year of publication
2001
Pages
1608 - 1619
Database
ISI
SICI code
0743-7463(20010306)17:5<1608:HDSEFT>2.0.ZU;2-5
Abstract
The possibility for electrochemical modification of the surface functional groups of a self-assembled siloxane-anchored monolayer was explored. The pr imary challenge of this work was to minimize the insulating silicon oxide l ayer while still providing ample hydrophilic oxide for anchoring siloxane-b ased monolayers. Working on highly doped silicon electrodes, wetting measur ements and scanning probe microscopies (both atomic force microscopy and la teral force microscopy) were combined with electrochemical measurements to evaluate various surface preparations in terms of their suitability for com bining electrochemical activity with smooth uniform surfaces on which succe ssful monolayer formation can be achieved. The difficulties encountered in achieving this balance suggest that organic electrochemistry on an oxidized silicon surface will be difficult to achieve, in the presence of even a th in oxide layer.