A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU N-GAAS SCHOTTKY BARRIERS DUE TO REACTIVE ION ETCHING/

Authors
VANALME GM VANMEIRHAEGHE RL CARDON F VANDAELE P
Citation
Gm. Vanalme et al., A BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) STUDY OF THE BARRIER HEIGHT CHANGE OF AU N-GAAS SCHOTTKY BARRIERS DUE TO REACTIVE ION ETCHING/, Semiconductor science and technology, 12(7), 1997, pp. 907-912
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
7
Year of publication
1997
Pages
907 - 912
Database
ISI
SICI code
0268-1242(1997)12:7<907:ABM(SO>2.0.ZU;2-L
Abstract
Ballistic electron emission microscopy (BEEM) has been applied to dete rmine the barrier height change of contacts in which the GaAs substrat e was dry etched by using SiCl4. The distribution of barrier heights o ver the contact area could be determined. It was found that dry etchin g introduced a second Gaussian distribution, with lower mean barrier h eight, next to the Gaussian distribution already found to be present i n wet etched reference samples. This additional distribution occurred over the main part of the contact area. A model is proposed based on a change of the stoichiometry of the surface region produced by the rea ctive ion etching.