The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions

It is established that doping (by means of ion implantation) of SiO2 films with Si nanoinclusions (NI) (SiO2:Si) by phosphorus results in an enhanceme nt of the photoluminescence (PL) peak at similar to 800 nm without a signif icant shift of it. This peak is believed to be linked with silicon NI servi ng as quantum dots (QD). Three mechanisms of PL enhancement are suggested. It is shown experimentally that the most probable mechanisms are: the passi vation of broken bonds by phosphorus; the increase of donor centers in the NI. Theoretical investigation of the energy spectra and the energy of radia tive transition in a QD with and without one donor center is provided. It i s shown that the energy of radiative transition does not affected by the pr esence of a donor center. (C) 2001 Elsevier Science B.V. All rights reserve d.