Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001)

A thin AlGaN layer, which is suitable for structural study using Rutherford backscattering (RBS)/channeling, was grown on an Al2O3(0001) substrate by metalorganic chemical vapor deposition. The results show that the compositi on of the epilayer is Al0.05Ga0.95N and that although the epilayer is very thin (79 nm), it has a good crystalline quality (chi (min) = 1.9%). The azi muthal orientation of the AlGaN epilayer relative to the Al2O3 substrate is AlGaN[0001] // Al2O3[0001] and AlGaN{1120} // Al2O3{1010}, showing that th e AlGaN epilayer is rotated by 30 degrees around the [0001] axis with respe ct to the Al2O3 substrate which decreases the lattice mismatch between the epilayer and the substrate significantly. RES angular scan was used to dete rmine the strain-induced tetragonal distortion of the epilayer. Combined wi th X-ray diffraction, the perpendicular and parallel elastic strains of the AlGaN layer, e(perpendicular to) = +0.31% and e(parallel to) = -0.28%, can be calculated. (C) 2001 Elsevier Science B.V. All rights reserved.