Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition

Authors
Ren, XT Huang, MB Amadon, S Lanford, WA Paliza, MAM Feldman, LC
Citation
Xt. Ren et al., Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition, NUCL INST B, 174(1-2), 2001, pp. 187-193
Citations number
11
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
174
Issue
1-2
Year of publication
2001
Pages
187 - 193
Database
ISI
SICI code
0168-583X(200103)174:1-2<187:IBMOSR>2.0.ZU;2-V
Abstract
Ion beam techniques have been applied to determine the tin-to-indium ratio in indium tin oxide (ITO) films prepared by pulsed-laser deposition (PLD). Particle induced X-ray emission (PIXE) and high-resolution Rutherford backs cattering (HRRBS) using a magnetic spectrometer were carried out on various ITO samples. Both techniques agreed within experimental errors. This work suggests that PIXE and HRRBS are applicable for analysis of high-Z elements in thin films, providing valuable information for material synthesis. (C) 2001 Elsevier Science B.V. All rights reserved.