Modelling electronic spectra of crystals in electric fields with various orientations

Authors
Citation
A. Losev et S. Vlaev, Modelling electronic spectra of crystals in electric fields with various orientations, PHYS ST S-B, 223(3), 2001, pp. 627-634
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
223
Issue
3
Year of publication
2001
Pages
627 - 634
Database
ISI
SICI code
0370-1972(200102)223:3<627:MESOCI>2.0.ZU;2-Q
Abstract
The present work considers the electronic spectra of a simple two-dimension al (2D) cubic crystal and a three-dimensional (3D) GaAs crystal when a cons tant electric field is applied. The 2D case is treated within the empirical tight-binding (TB) model, taking one s-orbital per atom and accounting for the interactions with neighbours up to fourth order. For the 3D case a sem iempirical sp(3)s* TB model is used, taking into account the spin and first neighbours. The local densities of states (LDOSs) have been calculated for different field intensities, showing that for a sufficiently strong field the 2D LDOS turns into the ID LDOS corresponding to chains perpendicular to the field orientation. This is a novel observation achieved through the us e of neighbours farther than the first. The 3D LDOS of a GaAs crystal proje cted by a strong field on the [001] direction is found to coincide with the 2D LDOS of an isolated atomic layer.