Numerical determination of shallow electronic states bound by dislocationsin semiconductors

Using a plane wave basis, we have solved numerically the Schrodinger equati on of the envelope function in the case of dislocation strain field binding potentials (deformation and piezoelectric coupling). Shallow one-dimension al bands are found for both electrons and holes, characterised by larger bi nding energies than those previously found by approximated analytical metho ds, 1D dislocation bands have also been computed and show a splitting of li ght and heavy hole bands resulting into four distinct bands.