Monte Carlo simulation by scattered packet for semiclassical transport in semiconductors: Application to holes in silicon

Authors
Amechnoue, K Diyadi, J Hlou, L Vaissiere, JC Varani, L Aboubacar, M Moatadid, A
Citation
K. Amechnoue et al., Monte Carlo simulation by scattered packet for semiclassical transport in semiconductors: Application to holes in silicon, PHYS ST S-B, 223(3), 2001, pp. 657-663
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
223
Issue
3
Year of publication
2001
Pages
657 - 663
Database
ISI
SICI code
0370-1972(200102)223:3<657:MCSBSP>2.0.ZU;2-P
Abstract
We present a new Monte Carlo algorithm, using a Scattered Packet technique to calculate transport parameters in semiconductors. This algorithm allows calculations with a great precision and a significant gain in CPU time as c ompared to the standard Monte Carlo scheme. As application we report the ca lculation of the correlation function of Velocity fluctuations and noise te mperature for holes in silicon at T = 300 K. The results are in good agreem ent with standard Monte Carlo calculations as well as with experimental dat a.