Epitaxial growth and magnetic properties of Fe(111) films on Si(111) substrate using a GaSe(001) template - art. no. 094428

Authors
Eddrief, M Wang, Y Etgens, VH Mosca, DH Maurice, JL George, JM Fert, A Bourgognon, C
Citation
M. Eddrief et al., Epitaxial growth and magnetic properties of Fe(111) films on Si(111) substrate using a GaSe(001) template - art. no. 094428, PHYS REV B, 6309(9), 2001, pp. 4428
Citations number
50
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6309
Issue
9
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010301)6309:9<4428:EGAMPO>2.0.ZU;2-C
Abstract
We report the growth of Fe(111) overlayers on unstrained GaSe(001) epitaxie d on a Si(111)-H terminated substrate. The GaSe prevents chemical reaction between Fe and Si and enables the achievement of fully relaxed Fe films abo ve monolayer coverage, despite the 8% lattice mismatch between Fe and GaSe. The evolution of the magnetic properties and chemical reactivity of the ir on layer has been studied as a function of thickness. The reduction of magn etization for very thin Fe films has been correlated with a self-limited so lid-state reaction at the Fe/GaSe interface.