Geometrical magnetothermopower in semiconductors

The geometry of a semiconductor sample can be designed to create a very lar ge change of the thermoelectric power in a magnetic field, similar to the e ffects of the sample geometry on the magnetoresistance. In semiconductors i n which the minority carriers have a higher mobility than the majority carr iers, this geometrical magnetothermopower can freeze out the contribution o f the former to the total thermopower. This opens a new route toward high-e fficiency thermoelectric materials. We also examine the thermoelectric reci procity relations for these macroscopic systems.