Influence of the excitation frequency on CH4/H/H-2 plasmas for diamond film deposition: electron energy distribution function and atomic hydrogen concentration
Fj. Gordillo-vazquez et al., Influence of the excitation frequency on CH4/H/H-2 plasmas for diamond film deposition: electron energy distribution function and atomic hydrogen concentration, PLASMA SOUR, 10(1), 2001, pp. 99-116
The influence of the excitation frequency f = omega /2 pi of the applied el
ectric field on the period average electron energy distribution function (E
EDF) and on the atomic hydrogen concentration found near the deposited diam
ond films (substrate) and in the bulk of CH4(less than or equal to5%)/H/H-2
plasmas produced in RF and MW discharges is estimated. This is done throug
h the solution, as a function of the reduced effective electric field, of a
stationary homogeneous electron Boltzmann equation (EBE and the solution,
in terms of the atomic hydrogen mole fraction, of a simple kinetic model fo
r the plasma mechanisms underlying the production and loss of atomic hydrog
en. The physical basics underlying the approach followed to solve the EBE,
including discussion of EEDF time-modulation effects, are discussed in the
light of recent results by Loureiro (1993 Phys. Rev. 47 1262) on time-depen
dent kinetics of pure Hz plasmas. Correlations are established between the
results, obtained under various discharge conditions, from plasma-enhanced
chemical vapour deposition (PECVD) experiments of diamond-like cat bun (DLC
) and diamond thin films, and the calculated EEDF, atomic hydrogen concentr
ations tin the plasma and near the substrate) and mechanisms underlying the
production and loss of atomic hydrogen in the plasma.