Electronic structure of the doped SnO2

SnO2 doped with La, Ce, Sm, Zn, Ca, Al and Sb was prepared by sol-gel techn ique and characterized by TEM, BET, XPS and XAES. The effect of the dopants on the grain sizes of SnO2 was described and especially the effect of dopa nts on the distribution of the electronic state density (DESD) of Sn4d orbi tal was studied deeply by using X-ray-induced Auger electron spectroscopy ( XAES). It was observed that the dopants could influence not only the grain sizes of SnO2 but also electronic structure of SnO2, as well as the stabili ty of the doped SnO2 samples. The experiment results indicated that the str ucture and stability of SnO2 film could be improved by the chemical modific ation of the dopants.