Studies of the earliest stages of plasma-enhanced chemical vapor deposition of SiO2 on polymeric substrates

Citation
G. Dennler et al., Studies of the earliest stages of plasma-enhanced chemical vapor deposition of SiO2 on polymeric substrates, THIN SOL FI, 382(1-2), 2001, pp. 1-3
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
382
Issue
1-2
Year of publication
2001
Pages
1 - 3
Database
ISI
SICI code
0040-6090(20010201)382:1-2<1:SOTESO>2.0.ZU;2-P
Abstract
We have studied the structure of hyper-thin (thickness, d less than or equa l to 10 nm) SiO2 coatings deposited by plasma-enhanced chemical vapor depos ition (PE-CVD) on various polymers (polypropylene, polyimide, polyethylenet erephthalate). Rutherford backscattering spectroscopy (RBS) has shown that the concentration of silicon atoms per unit area is a linear function of th e deposition time, t, for t greater than or equal to 0.5 s. Using reactive ion etching (RIE) in O-2 plasma, we observe that the coatings are continuou s, not island-like, even for d approximate to 2 nm; this is confirmed by X- ray photoelectron spectroscopy (XPS), at high values of the rake-off angle. In conclusion, PE-CVD film growth on polymers occurs in a layer-by-layer ( Frank-van der Merwe), not in a Volmer-Weber (island coalescence) mode. (C) 2001 Elsevier Science B.V. All rights reserved.