G. Dennler et al., Studies of the earliest stages of plasma-enhanced chemical vapor deposition of SiO2 on polymeric substrates, THIN SOL FI, 382(1-2), 2001, pp. 1-3
We have studied the structure of hyper-thin (thickness, d less than or equa
l to 10 nm) SiO2 coatings deposited by plasma-enhanced chemical vapor depos
ition (PE-CVD) on various polymers (polypropylene, polyimide, polyethylenet
erephthalate). Rutherford backscattering spectroscopy (RBS) has shown that
the concentration of silicon atoms per unit area is a linear function of th
e deposition time, t, for t greater than or equal to 0.5 s. Using reactive
ion etching (RIE) in O-2 plasma, we observe that the coatings are continuou
s, not island-like, even for d approximate to 2 nm; this is confirmed by X-
ray photoelectron spectroscopy (XPS), at high values of the rake-off angle.
In conclusion, PE-CVD film growth on polymers occurs in a layer-by-layer (
Frank-van der Merwe), not in a Volmer-Weber (island coalescence) mode. (C)
2001 Elsevier Science B.V. All rights reserved.