Characterization of a growth-front interface in a HPHT-grown diamond crystal by transmission electron microscopy

Citation
Lw. Yin et al., Characterization of a growth-front interface in a HPHT-grown diamond crystal by transmission electron microscopy, APPL PHYS A, 72(3), 2001, pp. 373-375
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN journal
09478396 → ACNP
Volume
72
Issue
3
Year of publication
2001
Pages
373 - 375
Database
ISI
SICI code
0947-8396(200103)72:3<373:COAGII>2.0.ZU;2-5
Abstract
The growth-front interface of a diamond single crystal, which was grown fro m the Fe - Ni - C system under high pressure and high temperature (HPHT), h as been directly observed by transmission electron microscopy (TEM) for the first time. The presence of a cellular interface suggests that the diamond is grown from solution and there exists a narrow supercooling zone in fron t of the solid-liquid interface. Diamond-growth parallel layers were also f ound, which indicates that the diamond grows from solution layer by layer. It provides direct evidence that the diamond is synthesized through graphit e dissolution and transformation to subcritical diamond particles in a molt en catalyst, diamond subcritical particle connection to form diamond cluste rs, diffusion of the diamond clusters to the growing diamond, and unificati on of the diamond clusters on the growing diamond crystal.