Lw. Yin et al., Characterization of a growth-front interface in a HPHT-grown diamond crystal by transmission electron microscopy, APPL PHYS A, 72(3), 2001, pp. 373-375
The growth-front interface of a diamond single crystal, which was grown fro
m the Fe - Ni - C system under high pressure and high temperature (HPHT), h
as been directly observed by transmission electron microscopy (TEM) for the
first time. The presence of a cellular interface suggests that the diamond
is grown from solution and there exists a narrow supercooling zone in fron
t of the solid-liquid interface. Diamond-growth parallel layers were also f
ound, which indicates that the diamond grows from solution layer by layer.
It provides direct evidence that the diamond is synthesized through graphit
e dissolution and transformation to subcritical diamond particles in a molt
en catalyst, diamond subcritical particle connection to form diamond cluste
rs, diffusion of the diamond clusters to the growing diamond, and unificati
on of the diamond clusters on the growing diamond crystal.