Impedance measurements on TiO2-Fe2O3 thin films

TiO2-Fe2O3 semiconducting films were prepared by the resistive evaporation method on a glass substrate. Impedance and optical absorption measurements were made on these samples. From the impedance analysis (assuming an equiva lent RC circuit), it was observed that the admittance and impedance functio ns are frequency dependent. From the optical absorption spectrum, the energ y band-gap value was found to be 1.15 eV. The charge-carrier concentration (N) is calculated by using Mott-Schottky relations. I - V measurements were also made on these samples.