Indium tin oxide (ITO) surfaces were treated by solvent cleaning, by plasma
of oxygen, argon, nitrogen and by argon ion (Art) sputtering. Angular-depe
ndent X-ray photoelectron spectroscopy (ADXPS) and ultraviolet photoelectro
n spectroscopy (UPS) were used to determine the chemical composition, the c
hemical states and the work function after each treatment. It was found tha
t oxygen plasma and nitrogen plasma chemically reacted with the ITO surface
s. Yet little etching of the surface can be observed after plasma treatment
s. Among all treatments, oxygen-plasma-treated ITO achieved the highest wor
k function of 3.90 eV, whereas Ar+-sputtered ITO surface had the lowest wor
k function of 3.90 eV. The stoichiometry of the ITO surface is shown to be
the major controlling factor of the ITO work function.