Effect of annealing time and temperature on the formation of threading andprojected range dislocations in 1 MeV boron implanted Si

The effect of annealing temperature and time on the formation of threading dislocations was investigated for high energy boron implants into silicon. 1 MeV B+ was implanted at a dose of 1 x 10(14)/cm(2) into [100] Si wafers. The wafers were subsequently annealed in either a rapid thermal annealing ( RTA) furnace or a conventional furnace for times between 1 s and 1 h at tem peratures between 700 and 1150 degreesC. Following this anneal the wafers w ere put through a standard complementary metal-oxide-semiconductor (CMOS) p rocess. After processing, the threading dislocation density and projected r ange dislocation density were studied using etch pit density counts and tra nsmission electron microscopy (TEM). The results show that annealing (eithe r RTA or furnace) at temperatures above 1000 degreesC prior to CMOS process ing reduced the high density of threading dislocations by 1-2 orders of mag nitude. Quantitative plan-view TEM studies show that the mechanism for defe ct reduction is different for the RTA versus furnace annealing and may be r amp rate dependent. (C) 2001 American Institute of Physics.