Sb-doped SrTiO3 transparent semiconductor thin films

Citation
Hh. Wang et al., Sb-doped SrTiO3 transparent semiconductor thin films, APPL PHYS L, 78(12), 2001, pp. 1676-1678
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
12
Year of publication
2001
Pages
1676 - 1678
Database
ISI
SICI code
0003-6951(20010319)78:12<1676:SSTSTF>2.0.ZU;2-5
Abstract
Optically transparent Sb-doped SrTiO3 thin films with a transmittance highe r than 95% in most of the visible region have been grown on SrTiO3 (001) su bstrate by pulsed laser deposition. The films behave as an n-type semicondu ctor between 10 K and room temperature. The carrier concentration and mobil ity of the films at room temperature are similar to5.8 x 10(17) cm(-3) and similar to6.4 cm(2)/V s, respectively. X-ray photoelectron spectroscopy mea surement reveals that the delocalized electrons from the Sb dopants give ri se to deep impurity levels within the band gap of the parent compound, whic h are responsible for the electrical conduction observed. The wide band gap and low density of states in the conduction band account for transparency of the films. (C) 2001 American Institute of Physics.