Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature

Amorphous carbon (alpha -C) films were deposited on Si substrates by magnet ron sputtering at room temperature, followed by a deposition of TiN on top of the carbon films to form heterojunction devices. The electrical properti es of the TiN/alpha -C/Si devices were characterized by capacitance-voltage , conductance-voltage, and current-voltage measurements as a function of te mperature. The results showed that the devices behaved like metal-insulator -semiconductor devices at low temperatures, while at higher temperatures, t he carbon films exhibited a high internal conductivity and the overall perf ormance was similar to that of heterojunction devices. The conductivity was adequately modeled and found to follow the thermionic field emission model . The TiN exhibited an excellent behavior as a metallic electrode of the de vices. (C) 2001 American Institute of Physics.