N. Konofaos et al., Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature, APPL PHYS L, 78(12), 2001, pp. 1682-1684
Amorphous carbon (alpha -C) films were deposited on Si substrates by magnet
ron sputtering at room temperature, followed by a deposition of TiN on top
of the carbon films to form heterojunction devices. The electrical properti
es of the TiN/alpha -C/Si devices were characterized by capacitance-voltage
, conductance-voltage, and current-voltage measurements as a function of te
mperature. The results showed that the devices behaved like metal-insulator
-semiconductor devices at low temperatures, while at higher temperatures, t
he carbon films exhibited a high internal conductivity and the overall perf
ormance was similar to that of heterojunction devices. The conductivity was
adequately modeled and found to follow the thermionic field emission model
. The TiN exhibited an excellent behavior as a metallic electrode of the de
vices. (C) 2001 American Institute of Physics.